{"id":192639,"date":"2024-08-28T15:03:17","date_gmt":"2024-08-28T13:03:17","guid":{"rendered":"https:\/\/www.rse-web.it\/pubblicazioni\/study-of-the-cross-influence-between-iii-v-and-iv-elements-deposited-in-the-same-movpe-growth-chamber\/"},"modified":"2024-08-31T00:29:58","modified_gmt":"2024-08-30T22:29:58","slug":"study-of-the-cross-influence-between-iii-v-and-iv-elements-deposited-in-the-same-movpe-growth-chamber","status":"publish","type":"pubblicazioni","link":"https:\/\/www.rse-web.it\/en\/publications\/study-of-the-cross-influence-between-iii-v-and-iv-elements-deposited-in-the-same-movpe-growth-chamber\/","title":{"rendered":"Study of the cross-influence between III-V and IV elements deposited in the same MOVPE growth chamber"},"content":{"rendered":"<p class=\"last-updated-date\">Recently updated on August 31st, 2024 at 12:29 am<\/p>","protected":false},"excerpt":{"rendered":"<p>The article reports the effect of the mutual influence of the elements of groups IV and III-V on the growth rate, background doping and morphology of the deposited semiconductors<\/p>\n","protected":false},"author":93,"featured_media":0,"comment_status":"open","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"tags":[1328,1307],"targets":[],"pubblicazioni_tipologie":[773],"class_list":["post-192639","pubblicazioni","type-pubblicazioni","status-publish","hentry","tag-photovoltaics","tag-renewable-energy-en","pubblicazioni_tipologie-isi-article-en"],"acf":{"projects":{"ID":191040,"post_author":"464","post_date":"2024-07-10 15:54:17","post_date_gmt":"2024-07-10 13:54:17","post_content":"","post_title":"High-efficiency photovoltaics","post_excerpt":"This project &egrave; aims to foster the development of highly efficient and reduced-cost photovoltaic (PV) generation systems, both flat-plate and concentrating, that also help to optimize production of energy from plants installed in Italy.","post_status":"publish","comment_status":"open","ping_status":"closed","post_password":"","post_name":"high-efficiency-photovoltaics","to_ping":"","pinged":"","post_modified":"2024-08-09 14:36:11","post_modified_gmt":"2024-08-09 12:36:11","post_content_filtered":"","post_parent":0,"guid":"https:\/\/www.rse-web.it\/progetti\/high-efficiency-photovoltaics\/","menu_order":0,"post_type":"progetti","post_mime_type":"","comment_count":"0","filter":"raw"},"order_posts":"","dont_show_search":false,"related_posts":false,"dont_show_hompage":false,"show_on_slider":false,"single_post_data":{"titolo_spot":"","post_content":"<p>We deposited structures based on Ge, SiGe, SiGeSn, AlAs, GaAs, InGaP and InGaAs in the same MOVPE growth chamber, in order to study the effect of the cross-influence of elements of groups IV and III-V on the growth rate, background doping and morphology. We demonstrated that by adopting an innovative design of the MOVPE growth chamber and appropriate growth conditions, the reduction in the growth rate of the IV elements due to the As \u2018carry over\u2019 effect can be eliminated and the background doping of As can be drastically reduced in both IV and III-V semiconductors. In the temperature range 748 K &#8211; 888 K, the morphologies of Ge and SiGe do not degrade when the semiconductors are deposited in a III-V contaminated MOVPE growth chamber. However, critical morphological aspects have been identified for SiGeSn and III-Vs, when MOVPE deposition occurs, respectively, in a MOVPE growth chamber contaminated by As or Sn. III-Vs morphologies are influenced by substrate type and orientation. The results are promising towards the monolithic integration of Group IV elements with III-V compounds in multijunction solar cells<\/p>\n","scarica_file":false,"link_estreno":[{"link_text":"Download ISI Article","link":"https:\/\/www.mdpi.com\/1996-1944\/14\/5\/1066"}],"button":{"text":"","link":""},"referente_group":false,"data_emissione":"2021-02-25","autori":"G. Tim\u00f2, G. Abagnale, N. Armani, E. Achilli, M. Cornelli, F. Annoni, M. Calicchio (RSE S.p.A.), B. Schineller (AIXTRON SE), L.C. Andreani (Universit\u00e0 di Pavia)","destinazione":"MDPI Materials 2021, 14(5), 1066, February 25, 2021","rif_rse":"21001562"},"satellite_post_url":""},"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.2 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Study of the cross-influence between III-V and IV elements deposited in the same MOVPE growth chamber - RSE<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.rse-web.it\/en\/publications\/study-of-the-cross-influence-between-iii-v-and-iv-elements-deposited-in-the-same-movpe-growth-chamber\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Study of the cross-influence between III-V and IV elements deposited in the same MOVPE growth chamber - RSE\" \/>\n<meta property=\"og:description\" content=\"The article reports the effect of the mutual influence of the elements of groups IV and III-V on the growth rate, background doping and morphology of the deposited semiconductors\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.rse-web.it\/en\/publications\/study-of-the-cross-influence-between-iii-v-and-iv-elements-deposited-in-the-same-movpe-growth-chamber\/\" \/>\n<meta property=\"og:site_name\" content=\"RSE\" \/>\n<meta property=\"article:modified_time\" content=\"2024-08-30T22:29:58+00:00\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.rse-web.it\/en\/publications\/study-of-the-cross-influence-between-iii-v-and-iv-elements-deposited-in-the-same-movpe-growth-chamber\/\",\"url\":\"https:\/\/www.rse-web.it\/en\/publications\/study-of-the-cross-influence-between-iii-v-and-iv-elements-deposited-in-the-same-movpe-growth-chamber\/\",\"name\":\"Study of the cross-influence between III-V and IV elements deposited in the same MOVPE growth chamber - 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