New results are reported regarding the MOVPE growth of SiGeSn heterojunctions for MJ cells.<\/p>\n","protected":false},"author":93,"featured_media":0,"comment_status":"open","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"tags":[1328,1307],"targets":[1317],"pubblicazioni_tipologie":[778],"class_list":["post-194598","pubblicazioni","type-pubblicazioni","status-publish","hentry","tag-photovoltaics","tag-renewable-energy-en","targets-research","pubblicazioni_tipologie-paper-en"],"acf":{"projects":{"ID":191040,"post_author":"464","post_date":"2024-07-10 15:54:17","post_date_gmt":"2024-07-10 13:54:17","post_content":"","post_title":"High-efficiency photovoltaics","post_excerpt":"This project è aims to foster the development of highly efficient and reduced-cost photovoltaic (PV) generation systems, both flat-plate and concentrating, that also help to optimize production of energy from plants installed in Italy.","post_status":"publish","comment_status":"open","ping_status":"closed","post_password":"","post_name":"high-efficiency-photovoltaics","to_ping":"","pinged":"","post_modified":"2024-08-09 14:36:11","post_modified_gmt":"2024-08-09 12:36:11","post_content_filtered":"","post_parent":0,"guid":"https:\/\/www.rse-web.it\/progetti\/high-efficiency-photovoltaics\/","menu_order":0,"post_type":"progetti","post_mime_type":"","comment_count":"0","filter":"raw"},"order_posts":"","dont_show_search":false,"related_posts":false,"dont_show_hompage":false,"show_on_slider":false,"single_post_data":{"titolo_spot":"","post_content":"
One of the fundamental challenges for the realization of low-cost and high-efficiency multijunction solar cells is the integration of III-V with IV elements. Of particular interest is the monolithic integration of the ternary material SiGeSn with the InGaP\/InGaAAs\/Ge structure via Metal Organic Vapor Phase Epitaxy (MOVPE). This paper reports the new results relating to SiGeSn deposited by MOVPE in the same growth chamber used for III-V deposition. The ternary material was grown on 4- and 6-inch germanium wafers, without tin precipitation, at relatively high growth temperature (490\u00b0C), with Disilane, Tin Tetrachloride, and Germanum as gas precursors. The SiGeSn layers were characterized by high-resolution X-ray diffraction (HRXRD), scanning electron microscopy (SEM), secondary ion mass spectroscopy (SIMS), and electrochemical capacitance voltage (ECV) measurement. Functional InGaP(N)\/SiGeSn(N)\/Ge(P) heterojunction (HJ) devices were then fabricated and characterized by electroluminescence and IV measurements, at different solar concentrations. Under the AM1.5 G173 spectrum, considering a 400-nm thick GaAs filter, a short circuit current density of up to 18 mA\/cm2 was measured with a Ta2O5\/SiO2 coating. The EQE simulations of the experimental data allowed us to estimate an application of SiGeSn 22% higher than the current application that could provide Ge with the same thickness. To simulate absorption in a four-junction structure, a 2500-nm thick GaAs filter and a 1-eV energy gap SiGeSn layer were considered: a short-circuit current density of up to 16 mA\/cm2 was obtained from filtered HJ. The measured and simulated current densities show the potential for successful integration of the grown SiGeSn MOVPE into the III-V MJ structure.<\/p>\n","scarica_file":false,"link_estreno":[{"link_text":"Download Memory","link":"https:\/\/www.eupvsec-proceedings.com\/proceedings?paper=48813"}],"button":{"text":"","link":""},"referente_group":false,"data_emissione":"2019-09-13","autori":"G. Tim\u00f2, G. Abagnale, M. Calicchio, M. Cornelli, N. Armani, F. Trespidi, E. Malvisi (RSE S.p.A.), E.Achilli (Universit\u00e0 di Pavia), F. Annoni (IMEM CNR, Parma), B. Schineller (AIXTRON), G. Siefer (Fraunhofer Institute for Solar Energy Systems ISE), R. Couderc (University of Grenoble Alpes)","destinazione":"EU PVSEC 2019 - 36th European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France, September 9-13, 2019 ","rif_rse":"19008506"},"satellite_post_url":""},"yoast_head":"\n