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Addressing MOCVD epitaxial germanium growth for PV

pubblicazioni - Presentazione

Addressing MOCVD epitaxial germanium growth for PV

The contribution starts with a brief introduction on the actual limit of mulit-junction (MJ) cells efficiency and possible strategies to get higher values. Simulations of the expected photovoltaic (PV) performances of epitaxial germanium solar cells are then shown. The need for new metallorganic sources for epitaxial germanium growth is evidenced and preliminary results on MOCVD epitaxial germanium growth by Isobutylgermanium (IBuGe) are presented. The future steps on MOCVD epitaxial germanium for PV are finally addressed.

The contribution starts with a brief introduction on the actual limit of mulit-junction (MJ) cells efficiency and possible strategies to get higher values. Simulations of the expected photovoltaic (PV) performances of epitaxial germanium solar cells are then shown. The need for new metallorganic sources for epitaxial germanium growth is evidenced and preliminary results on MOCVD epitaxial germanium growth by Isobutylgermanium (IBuGe) are presented. The future steps on MOCVD epitaxial germanium for PV are finally addressed.

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