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Simulation of epitaxial layers bowing of III-V on si structures

pubblicazioni - Poster

Simulation of epitaxial layers bowing of III-V on si structures

The combination of the superior electrical and optical performance of III-V semiconductors with mature silicon technology has been very attractive for the semiconductor industry. The successful integration of the III-V compound semiconductors with silicon opens the door to many advanced electronic and optoelectronic applications.

In particular, there is a huge interest to integrate III-V based multi-junction solar cells on silicon substrates in concentrating photovoltaic application, for reducing the device cost and improve the thermal heat dissipation. For many years, most attempts to grow device quality GaAs-based heterostructures on Si have not proven commercially successful. This is mainly due to the considerable lattice and thermal expansion coefficient mismatch between GaAs and Si which has led to high misfit dislocation densities, inferior performance and poor reliability in the GaAs/Si devices. In order to introduce some step forward towards the successful integration of III-V solar cell son Si substrates, RSE has being developing with AIXTRON a new growth MOCVD chamber which will allow improving the managing of the strained structures growth. In the preparation of the experimental work necessary to validate the new MOCVD equipment, in the frame of LISEA project, RSE has focalized its activity to review the recent progress on epitaxial III-V heterostructures on Si and develop a simulation of the bowing of the IIII-V heterostructures on Si.

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