The employment of luminescent solar concentrators (LSCs) is a well-known strategy for integrating photovoltaic technologies in buildings. One of the main challenges in this field lies in the development of effective solar cells whose band gap and structures are tuned to match the emission peak of the related LSC.

The cells are positioned at the edges of the concentrator plate and should be designed to benefit from the quasi-monochromatic irradiation. In this work we investigate the growth and characterization of high-efficiency (Al)InGaP solar cells designed to be coupled with LSCs.

Their performance is evaluated upon variation of their structure and composition and compared with a standard Si cell. Furthermore, by means of theoretical simulations of EQE, we evidence how InGaP structures optimized for LSC differ from those to be used under the direct solar spectrum.

Results obtained not only unveil the characteristics for an improved performance of the cells, but also represent an advance in the elucidation of the behavior of InGaP-based devices in LSCs for future optimization.