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Publications - ISI Article

A new theoretical approach for the performance simulation of Multi-junction solar cells

Publications - ISI Article

A new theoretical approach for the performance simulation of Multi-junction solar cells

The paper proposes a new theoretical approach for the performance simulation of multijunction (MJ) solar cells, starting from the weakness and strength of the Hovel model and the transfer matrix method (TMM) to describe the propagation of electromagnetic waves within the solar cell structure.

It is based on the diffusion matrix method (SMM) and on a simplified generation function that enables the precise description of the propagation of electromagnetic waves in the solar cell device, preserving, at the same time, the possibility of obtaining simple analytical solutions of the continuity equations. The numerical stability of the new theoretical approach is demonstrated first on InGaP/InGaAs/Ge triple junction solar cells, where the Ge substrate is considered as the last layer (N-layer) and then as the N-1 layer. Furthermore, the new theoretical approach is applied to simulate the performance of quadruple junction (QJ), or two-terminal (2T) or three-terminal (3T) thin InGaP/InGaAs/SiGeSn/Ge solar cells. For these devices, the calculated efficiency values were 45.1% and 44.9% respectively, at concentrations of 1000X, and considering the MJ cell limited by the InGaAs subcell. Finally, it is estimated that the QJ InGaP/InGaAs/SiGeSn/Ge solar cell has the potential to achieve efficiencies above 50% assuming adequate anti-reflection coatings.

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