We deposited structures based on Ge, SiGe, SiGeSn, AlAs, GaAs, InGaP and InGaAs in the same MOVPE growth chamber, in order to study the effect of the cross-influence of elements of groups IV and III-V on the growth rate, background doping and morphology. We demonstrated that by adopting an innovative design of the MOVPE growth chamber and appropriate growth conditions, the reduction in the growth rate of the IV elements due to the As ‘carry over’ effect can be eliminated and the background doping of As can be drastically reduced in both IV and III-V semiconductors. In the temperature range 748 K – 888 K, the morphologies of Ge and SiGe do not degrade when the semiconductors are deposited in a III-V contaminated MOVPE growth chamber. However, critical morphological aspects have been identified for SiGeSn and III-Vs, when MOVPE deposition occurs, respectively, in a MOVPE growth chamber contaminated by As or Sn. III-Vs morphologies are influenced by substrate type and orientation. The results are promising towards the monolithic integration of Group IV elements with III-V compounds in multijunction solar cells