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Epitaxial germanium for high efficiency MJ solar cells andIII-V based structures on silicon

pubblicazioni - Articolo

Epitaxial germanium for high efficiency MJ solar cells andIII-V based structures on silicon

Epitaxial Ge layers are of interest both for improving bottom solar cells performances of InGaP/InGaAs/Ge structures and for growing Si-Ge intermediate alloys, as buffer layers for III-V based cells grown on silicon wafers.

A recently developed metalorganic isobutylgermane (iBuGe) source has been tested for MOCVD epitaxial germanium growth on GaAs and Ge substrates. Two different MOCVD reactors, a vertical one and a horizontal one, have been utilised for the purpose and the growth results compared by Atomic Force Microscopy characterization. Owing to the low cracking temperature of the Ge-MO source, in principle low temperature deposition of MOCVD grown intermediate SiGe alloys could be possible, opening a new technological path to minimize growth thermal stress on III-V based structures growth on silicon.

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