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Homo and hetero epitaxy of Germanium using isobutylgermane

pubblicazioni - Articolo

Homo and hetero epitaxy of Germanium using isobutylgermane

Nominally undoped Ge epitaxial layers were deposited on Ge and GaAs substrates by means of Metal– Organic Vapor Phase (MOVPE) using a novel Germanium source, isobutylgermane (iBuGe), by Rohm and Haas Electronic Materials LLC (USA).

High Resolution X-ray Diffraction, Atomic Force Microscopy and Raman spectroscopy were combined to characterize the layers. Ge layers were deposited using AsH3 as a surfactant and several growth procedures were tested. The use of arsine reduced the growth rate and also significantly improved the epitaxial quality and surface roughness.

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