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Advancement in the MOVPE technology to increase the process yield andexpand the band gap engineering possibilities

pubblicazioni - Memoria

Advancement in the MOVPE technology to increase the process yield andexpand the band gap engineering possibilities

Sono presentati nuove soluzioni tecnologiche per la deposizione MOVPE di celle solari ad alta efficienza allo scopo di aumentare la resa del processo e ampliare le possibilità di ingegneria delle bande di energia.

New approaches to MOVPE material deposition have been developed in order to increase the process yield and expand the band gap engineering possibilities for the realization of high efficiency multijunction (MJ) solar cells. Paradigm changes in the MOVPE growth chamber design have been introduced in order to maintain high thermal homogeneity at the wafer surface also in the case of the growth of strained structures, and to allow, as well, getting a fast temperature control at the interfaces between arsenide and phosphide materials.

Furthermore, the growth chamber design has been modified in order to remove the growth incompatibility among III-V and group IV elements of the period table, by reducing the cross over effects coming from the utilization of the different semiconductor materials, thus opening the path towards the realization of “all MOVPE grown” III-V/IV based MJ solar cells (like for example the InGaP/InGaAs/SiGeSn/Ge quadruple junction solar cells). As a proof of the concept, SiGe layers with high structural quality have been grown in the same MOVPE reactor used to growth InGaP/InGaAs/Ge MJ solar cell structures and a first demonstration of InGaP/InGaAs/SiGe/Ge TJ solar cell is presented.

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