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III-V Materials engineering and novel approaches to material deposition

pubblicazioni - Articolo

III-V Materials engineering and novel approaches to material deposition

E’ presentata una breve indagine dei più importanti approcci ingegneristici sui materiali III -V che hanno portato alla realizzazione di celle solari a multigiunzione (MJ) con valore di efficienza del 44,7 % e le ricerche sviluppate da RSE nell’ambito del grande progetto europeo APOLLON (FP7), sui nuovi approcci alla deposizione dei materiali per incrementare ulteriormente il valore di efficienza delle celle solari e ridurre il costo della tecnologia.

A brief survey of the most important III-V material engineering approaches which brought to the realization of multijunction (MJ) solar cells reaching efficiency value of 44.7% is presented. In the frame of the recently concluded FP7 European large integrated APOLLON project, new approaches to material deposition have been identified for further incrementing the solar cell efficiency value and reduce the technology cost. A new MOCVD temperature tuning capability has been developed to compensate for wafer warping and maintain high thermal homogeneity of the wafer surface also in the case of the deposition of strained structures. Furthermore, in the road map toward the realization of 4 junction InGaP/GaAs/SiGeSn/Ge solar cells with the potential to reach efficiency value higher than 45%, preliminary results on the possibility to grow group III-V with group IV elements in the same MOCVD growth chamber have been demonstrated. As a proof of the concept, SiGe layers have been grown in the same MOCVD reactor used to growth InGaP/inGaAs/Ge MJ solar cell structures.

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