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Sensitivity of different bill of materials to PID: fast test method

pubblicazioni - Memoria

Sensitivity of different bill of materials to PID: fast test method

Il lavoro si pone l’obiettivo di confrontare i risultati di nuovi metodi di prova “industriali” per la valutazione della suscettibilità di moduli FV al PID, un recente fenomeno di degrado delle loro prestazioni energetiche, con quelli del metodo proposto ufficialmente in IEC 62804 TS Ed.1, al fine di verificarne l’efficacia.

IEC TS 62804-1:2015 defines procedures to test and evaluate the durability of crystalline silicon photovoltaic (PV) modules to the effects of short-term high-voltage stress. This technical specification is available to test PV modules’ behavior regarding Potential Induced Degradation (PID), one of the most recent and relevant module’s degradation phenomena which frequently led to significant yield losses in c-Si PV power plants.

During the development phase of the technical specification many module’s manufacturers were proposing different test methods in order to find a faster and more efficient way to check materials’ sensitivity to PID. PV Industry’s main goal is to verify PID sensibility of PV modules produced with different combinations of raw materials and then validate the different batches of encapsulants and cells used in production. The aim of this work is to correlate the results of new test methods with those of the method proposed in the IEC TS 62804-1:2015 and consequently to validate the industrial test methods.

To achieve these goal, 4 different Bills of Materials (BOM) were selected, using crystalline silicon cells and EVAs identified as sensible or resistant to PID according to an industrial test method. These BOMs were stressed in parallel according to the stress method “a” IEC TS 62804-1:2015, damp heat testing with an environmental chamber while applying high voltage, and according to the “industrial test method”. Results are compared and a correlation has been verified.

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