Cerca nel sito per parola chiave

pubblicazioni - Memoria

Simulation of the performances of multijunction solar cells with improved voltage by transfer and scattering matrix methods

pubblicazioni - Memoria

Simulation of the performances of multijunction solar cells with improved voltage by transfer and scattering matrix methods

Risultati preliminari sulla crescita di SiGeSn da IBuGE, disilano e stagno-tetracloruro.

SiGe and SiGeSn have been grown by using iso-butylgermane (I-BuGe), disilane (Si2H6) and tin-tetrachloride (SnCl4) in a modified AIX 2800G4 MOVPE reactor in order to improve the low temperature growth and reduce cross doping among group IV and III-V elements. SiGe(Sn) layers have been grown along with III-V compounds in the same MOVPE growth chamber with the final aim to realize high efficiency InGaP/InGaAs/SiGeSn/Ge quadruple junction solar cells. Diluted SiGe (4% of Si) growth rate versus temperature and I-BuGe partial pressure has been determined in the temperature range (460°C – 640°C) and compared with published data related to Ge growth with germane.

The dependence of growth rate on the growth chamber ceiling temperature and on the injection of I-BuGe into the top or bottom hydride lines is reported as well. SiGe and SiGeSn layers grown on Ge and GaAs substrates have been characterized by HR XRD, CV-profiler and SIMS. Cross doping effect of Ge, Si and Sn in III-V compounds has been studied on AlAs/GaAs Bragg test structures. To the best of our knowledge, the growth of SiGeSn by iso-butylgermane, disilane and tin-tetrachloride has never been reported yet.

Progetti

Commenti